Title :
Microwave transistors-the last 20 years
Author_Institution :
Tech. Univ. Ilmenau, Germany
Abstract :
This paper provides an overview of the evolution of microwave transistors during the last 20 years. Following a discussion of the situation in 1980 important developments and trends in the field are reviewed. Advanced transistor structures and the semiconductor materials used are examined and the current state of the art of microwave transistors is highlighted
Keywords :
MOSFET; Schottky gate field effect transistors; heterojunction bipolar transistors; high electron mobility transistors; microwave transistors; reviews; HBT; HEMT; III-V FETs; MESFET; PHEMT; Si MOSFET; advanced transistor structures; heterostructures; microwave transistors; review; semiconductor materials; wide band gap FETs; Circuits; Consumer electronics; Frequency; Gallium arsenide; MESFETs; MOSFETs; Microwave transistors; Noise figure; Power generation; Semiconductor materials;
Conference_Titel :
Devices, Circuits and Systems, 2000. Proceedings of the 2000 Third IEEE International Caracas Conference on
Conference_Location :
Cancun
Print_ISBN :
0-7803-5766-3
DOI :
10.1109/ICCDCS.2000.869833
