DocumentCode
2429968
Title
Microwave transistors-the last 20 years
Author
Schwierz, Frank
Author_Institution
Tech. Univ. Ilmenau, Germany
fYear
2000
fDate
2000
Abstract
This paper provides an overview of the evolution of microwave transistors during the last 20 years. Following a discussion of the situation in 1980 important developments and trends in the field are reviewed. Advanced transistor structures and the semiconductor materials used are examined and the current state of the art of microwave transistors is highlighted
Keywords
MOSFET; Schottky gate field effect transistors; heterojunction bipolar transistors; high electron mobility transistors; microwave transistors; reviews; HBT; HEMT; III-V FETs; MESFET; PHEMT; Si MOSFET; advanced transistor structures; heterostructures; microwave transistors; review; semiconductor materials; wide band gap FETs; Circuits; Consumer electronics; Frequency; Gallium arsenide; MESFETs; MOSFETs; Microwave transistors; Noise figure; Power generation; Semiconductor materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Devices, Circuits and Systems, 2000. Proceedings of the 2000 Third IEEE International Caracas Conference on
Conference_Location
Cancun
Print_ISBN
0-7803-5766-3
Type
conf
DOI
10.1109/ICCDCS.2000.869833
Filename
869833
Link To Document