DocumentCode
2430012
Title
Seebeck difference - temperature sensors integrated into smart power technologies
Author
Dibra, Donald ; Stecher, Matthias ; Lindemann, Andreas ; Lutz, Josef ; Kadow, Christoph
Author_Institution
Infineon Technologies AG, Neubiberg, Germany
fYear
2009
fDate
14-18 June 2009
Firstpage
216
Lastpage
219
Abstract
In this work, difference - temperature (DeltaT) sensors based on the Seebeck effect integrated into a common drain smart power MOSFET technology are presented. The sensors generate a voltage signal proportional to the DeltaT. The highest Seebeck coefficient measured was 0.92 mV/K. This result was achieved with a p - doped silicon and n+ - doped poly silicon Seebeck DeltaT sensor. Power MOSFETs with embedded Seebeck DeltaT sensors are, to our knowledge, demonstrated for the first time.
Keywords
Seebeck effect; power MOSFET; power integrated circuits; temperature sensors; Seebeck effect; difference temperature sensors; drain smart power MOSFET technology; Chemical technology; Intelligent sensors; MOSFET circuits; Power MOSFET; Power electronics; Power integrated circuits; Silicon; Temperature sensors; Thermoelectricity; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on
Conference_Location
Barcelona
ISSN
1943-653X
Print_ISBN
978-1-4244-3525-8
Electronic_ISBN
1943-653X
Type
conf
DOI
10.1109/ISPSD.2009.5158040
Filename
5158040
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