• DocumentCode
    2430200
  • Title

    Diamond high-temperature power devices

  • Author

    Umezawa, Hitoshi ; Shikata, Shin-Ichi

  • Author_Institution
    Diamond Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
  • fYear
    2009
  • fDate
    14-18 June 2009
  • Firstpage
    259
  • Lastpage
    262
  • Abstract
    In this paper, the potential and the experimental results of high power Schottky barrier diodes on epitaxial diamond films have been presented. Increase of the Schottky barrier height improves reverse operation limit up to 3.1 MV/cm, which value is higher than the Emax of SiC. The reverse leakage current of the diamond SBDs is kept low as 10-4 A/cm2 at 415 K. Low on-resistance with good metal/diamond stability is also realized at high temperature operation.
  • Keywords
    Schottky barriers; Schottky diodes; diamond; elemental semiconductors; leakage currents; power semiconductor diodes; semiconductor epitaxial layers; Jk-C; Schottky barrier height; epitaxial diamond films; high power Schottky barrier diodes; metal-diamond stability; reverse leakage current; temperature 415 K; Charge carrier processes; Electric breakdown; Impurities; Leakage current; Material properties; Schottky barriers; Schottky diodes; Silicon carbide; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on
  • Conference_Location
    Barcelona
  • ISSN
    1943-653X
  • Print_ISBN
    978-1-4244-3525-8
  • Electronic_ISBN
    1943-653X
  • Type

    conf

  • DOI
    10.1109/ISPSD.2009.5158051
  • Filename
    5158051
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2430200