A macro-model-based MOSFET simulator

A device simulator, capable of handling general symbolic expressions, has been developed to simulate an LDD MOSFET under the Maple V release 3 environment. This simulator has both electrical and technological parameters as input variables, as well as the option to choose among different models for the carrier mobility. Pure analytical expressions are used for computing the drain current. This two-dimensional simulator has important features, like; position- and bias-dependent carrier mobility. Second order effects in the LDD region can be considered for the calculation of the bias-dependent series resistance. The simulator allows the user to manipulate any variable to investigate the effect of changing some of the technological parameters on the model of his/her election