Accelerated test for reliability analysis of SiC diodes

Author

Banu, Viorel ; Jordá, Xavier ; Montserrat, Josep ; Godignon, Philippe ; Millán, José ; Brosselard, Pierre

Author_Institution

Centro Nac. de Microelectron., IMB-CNM-CSIC, Bellaterra, Spain

fYear

2009

fDate

14-18 June 2009

Firstpage

267

Lastpage

270

Abstract

The purpose of this work is the analysis of reliable wire bonding schemes for power SiC diodes working at high temperature. The surge current and the power cycling behavior of different wire bonding technologies are analyzed. A dedicated test bench was developed for the surge current and the power cycling reliability tests. It allows an accelerated reliability test, 105 cycles takes just 3 hours. The 10 ms half-sinusoidal current pulse test allows observing the effect of the diode´s self-heating. The power cycling capability was analyzed using a new concept of observing the evolution of the dissipated energy per pulse, whose increase under constant current test pulse indicates the degradation of the device. These tests were helpful for chosen an enhanced bonding technology able to work at T_junctio=300degC.

Keywords

lead bonding; life testing; power semiconductor diodes; semiconductor device reliability; semiconductor device testing; silicon compounds; wide band gap semiconductors; SiC; accelerated test; half-sinusoidal current pulse test; power cycling behavior; power silicon carbide diode; reliability analysis; self-heating; surge current; temperature 300 C; time 10 ms; time 3 h; wire bonding; Aluminum; Bonding; Life estimation; Metallization; Schottky diodes; Silicon carbide; Surges; Temperature; Testing; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on

Conference_Location

Barcelona

ISSN

1943-653X

Print_ISBN

978-1-4244-3525-8

Electronic_ISBN

1943-653X

Type

conf

DOI

10.1109/ISPSD.2009.5158053

Filename

5158053