Title :
High Quantum Efficiency (Al) GaAs Nanowires for Optoelectronic Devices
Author :
Mokkapati, S. ; Nian Jiang ; Saxena, D. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
III-V semiconductor nanowires are promising for optoelectronic device applications. Applications of GaAs nanowires however have been limited due to low quantum/radiative efficiency. We discuss two approaches to increase the quantum efficiency of (Al) GaAs nanowires.
Keywords :
III-V semiconductors; aluminium compounds; nanophotonics; nanowires; optical materials; optoelectronic devices; semiconductor quantum wires; AlGaAs; III-V semiconductor nanowires; high quantum efficiency (Al) GaAs nanowires; optoelectronic device applications; quantum/radiative efficiency; Cavity resonators; Gallium arsenide; III-V semiconductor materials; Nanowires; Optoelectronic devices; Plasmons; Radiative recombination; III-V semiconductor; nanowire; optoelectronic devices; plasmonics;
Conference_Titel :
Photonics Society Summer Topical Meeting Series, 2014 IEEE
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4799-2766-1
DOI :
10.1109/SUM.2014.14
