Title :
Spin on glass as an antireflection layer on amorphous absorption layer photodetectors
Author :
Jacome, A. Torres ; Castillo, A. Munguía ; Islas, C. Zúniga
Author_Institution :
INAOE, Puebla, Mexico
Abstract :
A silicon based Separated-Absorption-Multiplication Avalanche Photo Diode (SAMAPD) is coated with Spin On Glass (SOG) as an antireflection (AR) layer. The curing temperature is only 200°C, for curing times ranging from 6 to 10 hours. It is demonstrated that the refractive index and thickness of the SOG can be controlled. The SAMAPD with an AR layer shows an improvement in the photocurrent up to 20% at 0.85 μm when compared with that without AR layer. A flat response in the range 0.8-0.9 μm is observed when the photocurrent of the AR coated SAMAPD is measured
Keywords :
Ge-Si alloys; amorphous semiconductors; antireflection coatings; avalanche photodiodes; hydrogen; photodetectors; spin coating; 0.8 to 0.9 micron; 200 C; 6 to 10 hour; SiGe:H; amorphous absorption layer photodetectors; antireflection layer; controlled refractive index; controlled thickness; flat response; improved photocurrent; low curing temperature; separated-absorption-multiplication APD; spin on glass; Absorption; Amorphous materials; Curing; Diodes; Glass; Photoconductivity; Refractive index; Silicon; Temperature distribution; Thickness control;
Conference_Titel :
Devices, Circuits and Systems, 2000. Proceedings of the 2000 Third IEEE International Caracas Conference on
Conference_Location :
Cancun
Print_ISBN :
0-7803-5766-3
DOI :
10.1109/ICCDCS.2000.869850
