Title :
Simulation of internal distribution of microwave noise sources in a short-channel nMOSFET
Author :
Obrecht, Michael S. ; Manku, Tajinder ; Elmasry, Mohamed I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Abstract :
High frequency excess noise in short-channel MOSFETs is discussed from the point of view of internal device characteristics, such as noise source density and current densities. It is demonstrated that the current density component perpendicular to the interface produces a major portion of the high frequency (diffusion) noise in short-channel MOSFETs
Keywords :
MOSFET; Poisson equation; current density; microwave field effect transistors; semiconductor device models; semiconductor device noise; shot noise; thermal noise; Poisson equation; bipolar diffusion-drift system; diffusion noise; high frequency excess noise; internal device characteristics; internal distribution simulation; microwave noise sources; noise source density; short-channel nMOSFET; transient simulation; vertical current density component; CMOS technology; Circuit noise; Computational modeling; Current density; Design optimization; Electrons; Genetic expression; MOSFET circuits; Radio frequency; Semiconductor device noise;
Conference_Titel :
Devices, Circuits and Systems, 2000. Proceedings of the 2000 Third IEEE International Caracas Conference on
Conference_Location :
Cancun
Print_ISBN :
0-7803-5766-3
DOI :
10.1109/ICCDCS.2000.869851
