Title :
An equivalent circuit model for IGBT
Author :
Kao, Chia-Hsiung ; Liang, Yat-Chin
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Abstract :
A new circuit model for the IGBT is developed. This model uses the transmission-line circuit technique and is suitable for circuit simulators. The new circuit model for the IGBT is implemented into widely used SPICE3 and all the simulation results are compared with the results of the TMA MEDICI device simulator
Keywords :
Poisson equation; SPICE; equivalent circuits; insulated gate bipolar transistors; semiconductor device models; transmission line theory; 1D approximation; IGBT; Poisson equation; SPICE3; circuit simulators; continuity equations; equivalent circuit model; high-level injection; transmission-line circuit technique; unit cell cross-section; Analytical models; Anodes; Circuit simulation; Doping; Electrons; Equivalent circuits; Insulated gate bipolar transistors; Medical simulation; Threshold voltage; Transmission lines;
Conference_Titel :
Devices, Circuits and Systems, 2000. Proceedings of the 2000 Third IEEE International Caracas Conference on
Conference_Location :
Cancun
Print_ISBN :
0-7803-5766-3
DOI :
10.1109/ICCDCS.2000.869852
