Title :
The Bi-mode Insulated Gate Transistor (BIGT) a potential technology for higher power applications
Author :
Rahimo, M. ; Kopta, A. ; Schlapbach, U. ; Vobecky, J. ; Schnell, R. ; Klaka, S.
Author_Institution :
ABB Switzerland Ltd. Semicond., Lenzburg, Switzerland
Abstract :
In this paper, an advanced Reverse Conducting (RC) IGBT concept is presented. The new technology is referred to as the Bi-mode Insulated Gate Transistor (BIGT) implying that the device can operate at the same current densities in transistor (IGBT) mode and freewheeling diode mode by utilizing the same available silicon volume in both operational modes. The BIGT design concept differs from that of the standard RC-IGBT while targeting to fully replace the state-of-the-art two-chip IGBT/diode approach with a single chip. The BIGT is also capable of improving the over-all performance especially under hard switching conditions.
Keywords :
current density; insulated gate bipolar transistors; power bipolar transistors; semiconductor device models; BIGT design concept; advanced reverse conducting IGBT; bi-mode insulated gate transistor; current density; hard switching condition; higher power applications; standard RC-IGBT; state-of-the-art two-chip IGBT-diode approach; Current density; Design optimization; Insulated gate bipolar transistors; Insulation; Prototypes; Semiconductor diodes; Semiconductor optical amplifiers; Silicon on insulator technology; Temperature; Voltage;
Conference_Titel :
Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-3525-8
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2009.5158057
