Title :
A novel double-gate Trench Insulated Gate Bipolar transistor with ultra-low on-state voltage
Author :
Hsu, Wesley Chih-Wei ; Udrea, Florin ; Chen, Ho-Tai ; Lin, Wei-Chieh
Author_Institution :
Eng. Dept., Univ. of Cambridge, Cambridge, UK
Abstract :
In this paper, a new Trench Insulated Gate Bipolar Transistor (TIGBT) which features a double-gate (DG) structure is presented. The new DG-TIGBT can enhance the excess carrier density near the emitter side of the IGBTs so that the conductivity modulation in the N- drift region is stronger than that presents in the conventional IGBTs. In addition, these excess holes can be extracted to the emitter via MOS channels during the turn-off transient, so the switching speed and losses of the DG-TIGBT are virtually unaffected by the extra carrier charge. In this work, we have demonstrated a 600-V DG-TIGBT which has an ultra-low on-state voltage and maintains the same turn-off speed as the conventional TIGBT.
Keywords :
carrier density; electrical conductivity; insulated gate bipolar transistors; power transistors; DG-TIGBT; MOS channels; carrier charge; carrier density; conductivity modulation; double-gate structure; switching speed; trench insulated gate bipolar transistor; turn-off speed; turn-off transient; ultra-low on-state voltage; voltage 600 V; Cathodes; Charge carrier density; Conductivity; Equivalent circuits; Insulated gate bipolar transistors; MOSFET circuits; Plasma density; Power MOSFET; Thyristors; Voltage;
Conference_Titel :
Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-3525-8
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2009.5158059
