Title :
Probe detectors for mapping manufacturing defects
Author :
Zanchi, A. ; Zappa, F. ; Ghioni, M. ; Giudice, A. ; Morrison, A.P. ; Sinnis, V.S.
Author_Institution :
Politecnico di Milano, Italy
Abstract :
The process-dependent defectivity of p-n junctions was investigated through the measurement of the avalanche triggering rate of single-photon avalanche diodes used as process probes. A nonlinear dependence of the ignition rate with the area of circular junctions is reported, which can be ascribed to a nonuniform density of the thermal generation centers, due to gettering. This has been verified by means of microscopic inspection and comparison with other available data. Technological hints are finally derived to counteract this nonuniformity
Keywords :
avalanche photodiodes; crystal defects; p-n junctions; probes; semiconductor device measurement; semiconductor device reliability; avalanche triggering rate; circular junctions; gettering; ignition rate; manufacturing defects; microscopic inspection; nonlinear dependence; nonuniform density; p-n junctions; probe detectors; process-dependent defectivity; single-photon avalanche diodes; thermal generation centers; Annealing; Avalanche breakdown; Detectors; Diodes; Ignition; Manufacturing; Microelectronics; Nitrogen; P-n junctions; Probes;
Conference_Titel :
Devices, Circuits and Systems, 2000. Proceedings of the 2000 Third IEEE International Caracas Conference on
Conference_Location :
Cancun
Print_ISBN :
0-7803-5766-3
DOI :
10.1109/ICCDCS.2000.869855
