DocumentCode :
243046
Title :
Tailoring Light-Matter Interactions in Semiconductor Nanowires with Nanocavity Plasmons
Author :
Agarwal, Rohit
Author_Institution :
Dept. of Mater. Sci. & Eng., Univ. of Pennsylvania, Philadelphia, PA, USA
fYear :
2014
fDate :
14-16 July 2014
Firstpage :
31
Lastpage :
31
Abstract :
Controlling the optical properties of semiconductors with an engineered surface plasmon nanocavity is of great importance for understanding the underlying physics and designing new nanoscale photonic devices including highly efficient photovoltaics. In this talk we will demonstrate highly enhanced absorption and also emission from single CdS-SiO2-Ag core-shell plasmonic nanowires, properties of which are different from simple photonic CdS nanowires. We will demonstrate that by fabricating a complete nanoplasmonic cavity, drastically enhanced absorption in comparison to metal nanoparticles attached to the nanowires is obtained due to the optical antenna effect, which can be tuned completely by controlling the nanowire size. Likewise, by tuning the plasmonic cavity size to match the whispering gallery mode resonances, an almost complete transition from thermalized excitonic to hot-excitonic emission can be achieved, which reflects exceptionally high radiative rate enhancement. Time-resolved measurements for the plasmonic nanowires showed the excited-state lifetime shortening by a factor of >1000, resulting in sub-picosecond lifetimes. Numerical calculations also confirms that the electromagnetic field enhancement by the whispering gallery plasmon nanocavity is as high as 5000 in these structures. In addition, we also demonstrate bright light emission from Si nanowires with large diameters (~100 nm) coupled to a plasmonic nanocavity due to hot carrier recombination with a quantum efficiency of ~1%. This represents many orders of magnitude radiative rate enhancement over their photonic counterparts, which can be useful for fabricating Si-based light emitting devices. Another example is the ~300X enhancement in second-harmonic generation signals from metal-coated semiconductor nanowires due to optimum mode confinement leading to very large optical fields. These observations indicate that the intrinsic optical properties of semiconductors can be engineered- by their interaction with nanocavity plasmons and is important for understanding and designing nanoscale optoelectronic devices with tailored responses.
Keywords :
cadmium compounds; light emitting diodes; nanoparticles; nanophotonics; nanowires; optical design techniques; optical fabrication; optical harmonic generation; optical materials; optical tuning; plasmonics; silicon; silicon compounds; silver; surface plasmons; whispering gallery modes; CdS-SiO2-Ag; Si nanowires; Si-based light emitting device fabrication; bright light emission; complete nanoplasmonic cavity fabrication; electromagnetic field enhancement; engineered surface plasmon nanocavity; excited-state lifetime shortening; high radiative rate enhancement; highly efficient photovoltaics; highly enhanced absorption; hot carrier recombination; hot-excitonic emission; intrinsic optical properties; large optical fields; light-matter interactions; metal nanoparticles; metal-coated semiconductor nanowires; nanocavity plasmon; nanoscale optoelectronic device designing; nanoscale photonic devices; nanowire size control; numerical calculations; optical antenna effect; optimum mode confinement; plasmonic cavity size tuning; plasmonic nanocavity; quantum efficiency; second-harmonic generation signals; semiconductor optical properties; simple photonic CdS nanowires; single CdS-SiO2-Ag core-shell plasmonic nanowires; subpicosecond lifetimes; tailored responses; thermalized excitonic emission; time-resolved measurements; whispering gallery mode resonances; whispering gallery plasmon nanocavity; Nanoscale devices; Nanowires; Optical device fabrication; Optical reflection; Photonics; Plasmons; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Society Summer Topical Meeting Series, 2014 IEEE
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4799-2766-1
Type :
conf
DOI :
10.1109/SUM.2014.23
Filename :
6902971
Link To Document :
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