Title :
Growth and Applications of Single-Nanowire GaN Light-Emitting Diodes
Author_Institution :
Phys. Meas. Lab., NIST, Boulder, CO, USA
Abstract :
We discuss two applications of single-nanowire GaN light-emitting diodes: optical interconnects and multifunction scanning probes. These applications take advantage of the native morphology of nanowires and the high mechanical strength of GaN.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; mechanical strength; nanophotonics; nanowires; optical interconnections; optical materials; optical microscopy; GaN; GaN mechanical strength; multifunction scanning probes; nanowire native morphology; optical interconnects; single-nanowire GaN light-emitting diodes; Detectors; Gallium nitride; Light emitting diodes; Molecular beam epitaxial growth; Nanowires; Optical interconnections; Probes; GaN nanowire; molecular beam epitaxy; scanning probe microscopy;
Conference_Titel :
Photonics Society Summer Topical Meeting Series, 2014 IEEE
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4799-2766-1
DOI :
10.1109/SUM.2014.24
