Design and process considerations for 1200V HVIC technology

A 1200 V LDMOS structure based on 600 V LDMOS technology has been developed for level shifters of industrial high side gate driver IC and SPM^reg solution. For a 1200 V LDMOS, the two serious phenomena occurred such as walk-out of a few hundreds volts and burn-out at a few muA of drain current during breakdown measurement unlike 600 V LDMOS having rugged breakdown characteristics. In this work, these challenges were clearly solved by critical techniques and LDMOS showed stable breakdown voltage of about 1400 V without walk-out and burn-out phenomena. Here, the causes and prevention technics on these challenges are described in detail in this paper.