DocumentCode
243053
Title
Color Tunable Phosphor-Free InGaN/GaN/AlGaN Core-Shell Nanowire Light-Emitting Diodes on Silicon
Author
Nguyen, H.P.T. ; Wang, Ruiqi ; Connie, A.T. ; Shih, I. ; Mi, Z.
Author_Institution
Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada
fYear
2014
fDate
14-16 July 2014
Firstpage
35
Lastpage
36
Abstract
We report on the achievement of InGaN/GaN/AlGaN core-shell dot-in-a-wire phosphor-free light-emitting diodes (LEDs) with significantly enhanced output power and tunable color emission.
Keywords
aluminium compounds; elemental semiconductors; gallium compounds; indium compounds; integrated optoelectronics; light emitting diodes; nanophotonics; nanowires; semiconductor quantum wires; silicon; InGaN-GaN-AlGaN; LEDs; Si; color tunable phosphor-free core-shell nanowire light-emitting diodes; dot-in-a-wire LED; silicon; tunable color emission; Aluminum gallium nitride; Gallium nitride; Image color analysis; Light emitting diodes; Power generation; Silicon; Substrates; GaN; light emitting diode; nanowire; selective area growth; surface recombination;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Society Summer Topical Meeting Series, 2014 IEEE
Conference_Location
Montreal, QC
Print_ISBN
978-1-4799-2766-1
Type
conf
DOI
10.1109/SUM.2014.26
Filename
6902974
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