• DocumentCode
    2430560
  • Title

    5.5 V zero-channel power MOSFETs with Ron,sp of 1.0 mΩ·mm2 for portable power management applications

  • Author

    Huang, W. ; Zhu, R. ; Khemka, V. ; Khan, T. ; Fu, Y. ; Cheng, X. ; Hui, P. ; Ger, M.L. ; Rodriquez, P.

  • Author_Institution
    SMARTMOSTM Technol. Center, Freescale Semicond., Tempe, AZ, USA
  • fYear
    2009
  • fDate
    14-18 June 2009
  • Firstpage
    319
  • Lastpage
    322
  • Abstract
    We report on the experimental demonstration of revolutionary 5.5 V zero-channel power MOSFETs with record low specific on-resistance of 1.0 mOmegaldrmm2 and Figure of Merit (RontimesQg) of 8.4 mOmegaldrnC with optimized metal layout. This novel device also shows good Hot Carrier Injection (HCI) immunity.
  • Keywords
    portable instruments; power MOSFET; hot carrier injection immunity; portable power management applications; voltage 5.5 V; zero-channel power MOSFETs; Batteries; Breakdown voltage; Doping; Energy management; Hot carrier injection; Human computer interaction; Leakage current; MOSFETs; Power generation; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on
  • Conference_Location
    Barcelona
  • ISSN
    1943-653X
  • Print_ISBN
    978-1-4244-3525-8
  • Electronic_ISBN
    1943-653X
  • Type

    conf

  • DOI
    10.1109/ISPSD.2009.5158066
  • Filename
    5158066
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2430560