• DocumentCode
    2430607
  • Title

    Development of a 100 kVA SiC inverter with high overload capability of 300 kVA

  • Author

    Sugawara, Y. ; Ogata, S. ; Izumi, T. ; Nakayama, K. ; Miyanagi, Y. ; Asano, K. ; Tanaka, A. ; Okada, S. ; Ishi, R.

  • Author_Institution
    Power Eng. R&D Center, Kansai Electr. Power Co, Amagasaki, Japan
  • fYear
    2009
  • fDate
    14-18 June 2009
  • Firstpage
    331
  • Lastpage
    334
  • Abstract
    High overload inverters were developed by using SiC devices for the first time, although its realization by using Si devices had been difficult because of Si´s low maximum Tj. The newly developed 100 kVA overload SiC inverter provides an overload capability rate of 200 % and can supply 300 kVA for up to 3 seconds. Moreover, the volume was downsized to 1/7.5 of the previous inverter and the 150 hour continuous inverter operation test at 110 kVA was performed successfully.
  • Keywords
    invertors; power semiconductor devices; silicon compounds; SiC; apparent power 100 kVA; apparent power 110 kVA; apparent power 300 kVA; high-overload capability; overload inverter; time 150 h; time 3 s; Coatings; Inverters; Performance evaluation; Power engineering; Power generation; Power system protection; Research and development; Resins; Silicon carbide; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on
  • Conference_Location
    Barcelona
  • ISSN
    1943-653X
  • Print_ISBN
    978-1-4244-3525-8
  • Electronic_ISBN
    1943-653X
  • Type

    conf

  • DOI
    10.1109/ISPSD.2009.5158069
  • Filename
    5158069