Title :
Development of a 100 kVA SiC inverter with high overload capability of 300 kVA
Author :
Sugawara, Y. ; Ogata, S. ; Izumi, T. ; Nakayama, K. ; Miyanagi, Y. ; Asano, K. ; Tanaka, A. ; Okada, S. ; Ishi, R.
Author_Institution :
Power Eng. R&D Center, Kansai Electr. Power Co, Amagasaki, Japan
Abstract :
High overload inverters were developed by using SiC devices for the first time, although its realization by using Si devices had been difficult because of Si´s low maximum Tj. The newly developed 100 kVA overload SiC inverter provides an overload capability rate of 200 % and can supply 300 kVA for up to 3 seconds. Moreover, the volume was downsized to 1/7.5 of the previous inverter and the 150 hour continuous inverter operation test at 110 kVA was performed successfully.
Keywords :
invertors; power semiconductor devices; silicon compounds; SiC; apparent power 100 kVA; apparent power 110 kVA; apparent power 300 kVA; high-overload capability; overload inverter; time 150 h; time 3 s; Coatings; Inverters; Performance evaluation; Power engineering; Power generation; Power system protection; Research and development; Resins; Silicon carbide; Testing;
Conference_Titel :
Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-3525-8
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2009.5158069
