DocumentCode
2430607
Title
Development of a 100 kVA SiC inverter with high overload capability of 300 kVA
Author
Sugawara, Y. ; Ogata, S. ; Izumi, T. ; Nakayama, K. ; Miyanagi, Y. ; Asano, K. ; Tanaka, A. ; Okada, S. ; Ishi, R.
Author_Institution
Power Eng. R&D Center, Kansai Electr. Power Co, Amagasaki, Japan
fYear
2009
fDate
14-18 June 2009
Firstpage
331
Lastpage
334
Abstract
High overload inverters were developed by using SiC devices for the first time, although its realization by using Si devices had been difficult because of Si´s low maximum Tj. The newly developed 100 kVA overload SiC inverter provides an overload capability rate of 200 % and can supply 300 kVA for up to 3 seconds. Moreover, the volume was downsized to 1/7.5 of the previous inverter and the 150 hour continuous inverter operation test at 110 kVA was performed successfully.
Keywords
invertors; power semiconductor devices; silicon compounds; SiC; apparent power 100 kVA; apparent power 110 kVA; apparent power 300 kVA; high-overload capability; overload inverter; time 150 h; time 3 s; Coatings; Inverters; Performance evaluation; Power engineering; Power generation; Power system protection; Research and development; Resins; Silicon carbide; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on
Conference_Location
Barcelona
ISSN
1943-653X
Print_ISBN
978-1-4244-3525-8
Electronic_ISBN
1943-653X
Type
conf
DOI
10.1109/ISPSD.2009.5158069
Filename
5158069
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