Title :
InP-Based Type-II Heterostructure Lasers for Wavelength above 2 µm
Author :
Sprengel, Stephan ; Andrejew, Alexander ; Veerabathran, Ganpath Kumar ; Federer, Florian ; Boehm, G. ; Grasse, Christian ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Tech. Univ. Muenchen, Garching, Germany
Abstract :
We present an innovative concept for InP-based lasers utilizing the type-II band alignment between GaAsSb and GaInAs. With W-shaped QWs spontaneous room temperature emission up to 3.9 μm and lasing up to 2.6 μm could be demonstrated.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser beams; quantum well lasers; spontaneous emission; GaAsSb-GaInAs; InP; InP-Based Type-II Heterostructure Lasers; W-shaped QW spontaneous room temperature emission; temperature 293 K to 298 K; type-II band alignment; wavelength 2.6 mum; wavelength 3.9 mum; Gas lasers; Laser excitation; Quantum cascade lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Photonics Society Summer Topical Meeting Series, 2014 IEEE
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4799-2766-1
DOI :
10.1109/SUM.2014.48
