A Linearized Cascode CMOS Power Amplifier

Author

Ko, Sangwon ; Lin, Jenshan

Author_Institution

Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL

fYear

2006

fDate

4-5 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

In this paper, an RF predistorter linearizer compatible with a CMOS process is proposed. The predistorter uses a diode connected MOSFET as a nonlinearity generation circuit. A negative or positive AM-PM characteristic is obtained from the predistorter by inserting a capacitor or an inductor in parallel with the predistorter. A 5.8 GHz cascode CMOS power amplifier was designed using a 0.18-mum 1P6M mixed-mode CMOS process and a predistorter was customized for the cascode power amplifier and integrated with it. The gain and phase distortion of the power amplifier were compensated and the simulation result of the cascode power amplifier shows a 29.3-dB improvement in the third order inter-modulation distortion when the predistorter is turned on.

Keywords

CMOS integrated circuits; MMIC power amplifiers; intermodulation distortion; mixed analogue-digital integrated circuits; 0.18 micron; 5.8 GHz; MOSFET; RF predistorter linearizer; cascode CMOS power amplifier; intermodulation distortion; mixed-mode CMOS process; phase distortion; CMOS process; Capacitors; High power amplifiers; Impedance; Linearization techniques; MOSFET circuits; Power amplifiers; Radiofrequency amplifiers; Schottky diodes; Semiconductor diodes; AM-AM; AM-PM; CMOS; linearization; power amplifiers; predistorter;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless and Microwave Technology Conference, 2006. WAMICON '06. IEEE Annual

Conference_Location

Clearwater Beach, FL

Print_ISBN

1-4244-0849-0

Electronic_ISBN

1-4244-0849-0

Type

conf

DOI

10.1109/WAMICON.2006.351920

Filename

4161082