3D simulations of ultra-small MOSFETs: the role of the discrete impurities on the device terminal characteristics

We have developed a three-dimensional particle-based simulator with a real-space molecular dynamics routine that avoids the "double-counting" of the long-range portion of the Coulomb force. Our Monte Carlo simulator can accurately model high field transport in semiconductor devices, while enabling the real-space treatment of the interactions, including multi-ion and multi-electron contributions, through the coupled molecular dynamics scheme. It has already been shown that the inclusion of the electron-electron and electron-ion interactions plays important role in device simulations. Here, we investigate how the atomistic description of the dopant ions in the channel affect the threshold voltage and drift velocity in devices representative of the state-of-the-art technology that have different number and different distribution of the impurity atoms in their active region.