DocumentCode :
2431401
Title :
Low-power 48-GHz CMOS VCO and 60-GHz CMOS LNA for 60-GHz dual-conversion receiver
Author :
Lin, Yo-Sheng ; Chang, Tien-Hung ; Chen, Chang-Zhi ; Chen, Chi-Chen ; Yang, Hung-Yu ; Wong, Simon S.
Author_Institution :
Dept. of Electr. Eng., Nat. Chi Nan Univ., Puli, Taiwan
fYear :
2009
fDate :
28-30 April 2009
Firstpage :
88
Lastpage :
91
Abstract :
A low-power low-phase-noise 48-GHz CMOS LC voltage-control oscillator (VCO) and a low-power 60-GHz CMOS low-noise amplifier (LNA) for 60-GHz dual-conversion receiver are reported. The VCO dissipated 5.556 mW power, and achieved state-of-the-art phase noise of -105 dBc/Hz at 1-MHz offset from 47.84 GHz. The corresponding figure-of-merit (FOM) was -191.1 dBc/Hz, which is better than those of the reported CMOS LC VCOs around 48 GHz in the literature. Besides, the LNA consumed 21.4 mW power, and achieved input return loss (S11) of -10.6~ -37.4 dB, voltage gain (AV) of 10.7~ 18.8 dB, reverse isolation (S12) of -43.5~ -48.1 dB, input referred 1-dB compression point (P1dB-in) of -16.2~ -20.8 dBm, and input third-order inter-modulation point (IIP3) of -4~ -7.5 dBm over the 57-64-GHz-band of interest.
Keywords :
CMOS integrated circuits; MMIC power amplifiers; field effect MIMIC; low noise amplifiers; low-power electronics; millimetre wave oscillators; phase noise; radio receivers; voltage-controlled oscillators; CMOS LNA; compression point; dual-conversion receiver; figure-of-merit; frequency 1 MHz; frequency 48 GHz; frequency 57 GHz to 64 GHz; frequency 60 GHz; gain 10.7 dB to 18.8 dB; input return loss; input third-order inter-modulation point; loss -10.6 dB to -37.4 dB; low-noise amplifier; low-power CMOS VCO; low-power low-phase-noise; power 21.4 mW; power 5.556 mW; reverse isolation; voltage gain; voltage-control oscillator; Area measurement; Circuits; Inductors; MOSFETs; Noise measurement; Phase measurement; Phase noise; Semiconductor device measurement; Spirals; Voltage-controlled oscillators; CMOS; LC; LNA; VCO; low phase noise; low power; tuning range;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Design, Automation and Test, 2009. VLSI-DAT '09. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-2781-9
Electronic_ISBN :
978-1-4244-2782-6
Type :
conf
DOI :
10.1109/VDAT.2009.5158102
Filename :
5158102
Link To Document :
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