DocumentCode
2431426
Title
Broadband medium power amplifier
Author
Pavluchik, A.A. ; Ignatenko, A.S. ; Nikitin, A.M. ; Kovalenko, A.F.
Author_Institution
Minsk Res. Inst. of Radiomater., Byelorussia
fYear
2000
fDate
11-15 Sept. 2000
Firstpage
131
Lastpage
132
Abstract
The results of research on a GaAs MMIC broadband medium power amplifier based on a MESFET process are presented. The calculated properties of the amplifier over the frequency band 1-8 GHz are given.
Keywords
III-V semiconductors; MESFET integrated circuits; MMIC power amplifiers; field effect MMIC; gallium arsenide; integrated circuit design; wideband amplifiers; 1 to 8 GHz; 7 GHz; 8 dB; GaAs; GaAs MMIC broadband amplifier; MESFET process; SHF; wideband medium power amplifier; Broadband amplifiers; FETs; Frequency; Gain; Gallium arsenide; MESFETs; Microwave technology; Power amplifiers; Power generation; Radiofrequency amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000. Microwave and Telecommunication Technology. 2000 10th International Crimean
Conference_Location
Crimea, Ukraine
Print_ISBN
966-572-048-1
Type
conf
DOI
10.1109/CRMICO.2000.1255874
Filename
1255874
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