Millimeter-wave and power characterization for integrated circuits

Author

de Matos, M. ; Kerhervé, E. ; Lapuyade, H. ; Begueret, J.B. ; Deval, Y.

Author_Institution

IMS Lab., Univ. of Bordeaux, Talence, France

fYear

2009

fDate

22-24 June 2009

Firstpage

1

Lastpage

4

Abstract

This paper presents a training in characterization of integrated circuits for millimeter-wave and power applications. The goal of this training is to initiate the student to millimeter-wave measurements. The training is based on high performance equipments like a VNA (Vector Network Analyzer) up to 110 GHz, two probe stations and a millimeter wave load-pull facility. The devices under test (DUT) are power amplifiers at 60 GHz and 77 GHz implemented in CMOS and BiCMOS technologies from STMicroelectronics on silicon substrate. Other radiofrequency component characterizations are also studied.

Keywords

BiCMOS analogue integrated circuits; CMOS analogue integrated circuits; field effect MIMIC; millimetre wave power amplifiers; network analysers; teaching; BiCMOS technology; CMOS technology; VNA; devices under test; frequency 110 GHz; frequency 60 GHz; frequency 77 GHz; integrated circuits; millimeter wave load-pull facility; power amplifiers; probe stations; radiofrequency component; training; vector network analyzer; Application specific integrated circuits; CMOS technology; Circuit testing; Millimeter wave integrated circuits; Millimeter wave measurements; Millimeter wave technology; Performance analysis; Power amplifiers; Probes; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

EAEEIE Annual Conference, 2009

Conference_Location

Valencia

Print_ISBN

978-1-4244-5385-6

Electronic_ISBN

978-1-4244-5386-3

Type

conf

DOI

10.1109/EAEEIE.2009.5335500

Filename

5335500