Silicon IMPATT diodes of improved reliability

Author

Boltovetes, N.S. ; Basanets, V.V. ; Ovar, A.V. ; Kurakin, A.M. ; Venger, E.F. ; Konakova, R.V. ; Milenin, V.V. ; Soloviev, E.A.

Author_Institution

State Sci. & Res. Inst. Orion, Kiev, Ukraine

fYear

2000

fDate

11-15 Sept. 2000

Firstpage

139

Lastpage

140

Abstract

We present the results of our investigation of silicon double-drift diodes intended for the millimeter wavelength range. Their ohmic contacts to the n/sup +/-area were based on the Pd/sub 2/Si-Ti-Pd-Au metallization, while those to the p/sup +/-area were based on the Pd/sub 2/Si-TiN-Ti-Au metallization. The accelerated tests of these IMPATT diodes at T=335, 346 and 375/spl deg/C have shown that the activation energy of degradation processes was 2.03 eV. An analysis of the diodes after failure has shown that no parametric failures occurred; the only mechanism for failures was metal penetration through the mesa.

Keywords

IMPATT diodes; elemental semiconductors; failure analysis; life testing; millimetre wave diodes; ohmic contacts; semiconductor device metallisation; semiconductor device reliability; silicon; 2.03 eV; 335 to 375 C; EHF; MM-wave diodes; Si IMPATT diodes; Si-Pd/sub 2/Si-Ti-Pd-Au; Si-Pd/sub 2/Si-TiN-Ti-Au; accelerated tests; activation energy; degradation processes; double-drift diodes; mesa metal penetration failure mechanism; metallization; millimeter wavelength range; n/sup +/-region; ohmic contacts; p/sup +/-region; reliability improvement; Diodes; Gaussian processes; Helium; Indium tin oxide; Microwave technology; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2000. Microwave and Telecommunication Technology. 2000 10th International Crimean

Conference_Location

Crimea, Ukraine

Print_ISBN

966-572-048-1

Type

conf

DOI

10.1109/CRMICO.2000.1255878

Filename

1255878