Title :
A new method for the determination of the minority carrier lifetime based on a biased OCVD technique [solar cells]
Author :
Bruno, C.J. ; Bogado, M. G Martinez ; Pla, J.C. ; Duran, J.C.
Author_Institution :
Dept. de Fisica, Grupo Energie Solar, Argentina
fDate :
29 Sep-3 Oct 1997
Abstract :
A new simple method for the determination of the solar cell minority carrier lifetime (τ), based on a biased OCVD technique, is analyzed. In this case, the excitation is given by a pulsed light source (time dependent contribution) plus a continuous illumination (continuous forward bias). Under appropriate conditions, this configuration produces an exponential decay with a time constant which depends on the bias. This constant decreases monotonously as a function of bias and allows one to determine an effective τ for the base region. Inexpensive test equipment has been developed which basically consists of two sets of high-efficiency GaAs LEDs, which provide both light contributions. Measurements have been performed on crystalline silicon solar cells elaborated in the Argentine Atomic Energy Commission. Experimental results show good agreement with the theoretical model and with numerical PC-1D simulations
Keywords :
carrier lifetime; elemental semiconductors; minority carriers; semiconductor device models; semiconductor device testing; silicon; solar cells; voltage measurement; GaAs; Si; base region; biased OCVD technique; continuous illumination; crystalline silicon; minority carrier lifetime measurement; numerical PC-1D simulations; open-circuit voltage decay; pulsed light source; solar cells; test equipment; Atomic measurements; Charge carrier lifetime; Energy measurement; Gallium arsenide; Light emitting diodes; Light sources; Lighting; Performance evaluation; Photovoltaic cells; Test equipment;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654061
