Langevin forces and generalized transfer fields for noise modelling in deep submicron devices

One of the most suitable techniques to compute noise in electronic devices is the standard impedance field method, a deterministic approach able to provide analytical and numerical solutions for the noise spectra of electronic devices at a hydrodynamic (HD) level. The starting point of our investigation consists in showing that this method is not appropriate for the calculation of noise spectra in deep submicron devices where spatial correlations between noise sources are of relevant importance. To overcome the difficulties which are intrinsic to the standard impedance field method we have developed a new scheme based on Langevin forces and generalized transfer fields.