DocumentCode
2431567
Title
Self-consistent full-band modeling of quantum semiconductor nanostructures
Author
Chirico, F. ; Di Carlo, A. ; Lugli, P.
Author_Institution
Dept. of Electron. Eng., Rome Univ., Italy
fYear
2000
fDate
22-25 May 2000
Firstpage
39
Lastpage
40
Abstract
We model a semiconductor nanostructure in term of empirical pseudopotentials. In order to reduce the size of the problem, we use a Bulk Band Expansion (BBE) of the system wavefunction. Due to the nonorthogonality of the Bulk wavefunctions between different semiconductors, the BBE leads to a generalized eigenvalue problem for the Schrodinger equation which can be easily solved with standard numerical algorithm. In order to be able to include charge rearrangement, doping and external potentials, we self-consistently couple the full-band Schrodinger equation with the Poisson equation.
Keywords
pseudopotential methods; semiconductor device models; Poisson equation; Schrodinger equation; bulk band expansion; eigenvalue problem; empirical pseudopotential; numerical algorithm; quantum semiconductor nanostructure; self-consistent full-band model; wave function; Carrier confinement; Electrons; Energy states; Gallium arsenide; HEMTs; MODFETs; Poisson equations; Schrodinger equation; Semiconductor nanostructures; Wave functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow 2000. 7th International Workshop on
Conference_Location
Glasgow, UK
Print_ISBN
0-85261-704-6
Type
conf
DOI
10.1109/IWCE.2000.869911
Filename
869911
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