Parameter extraction technique for nonlinear MESFET models

A nonlinear parameter extraction technique, that gives both rapid convergence and consistency of the derived model is proposed. The computational aspect of the technique is divided into two processes: (1) direct extraction of intrinsic element values by a statistically based routine and (2) optimization of intrinsic and extrinsic element values and/or nonlinear functions simultaneously at all bias points. The nonlinear elements are extracted as some analytical functions of bias and also as bias-dependent values. The results of the modeling of chip and packaged MESFET devices are presented and very good agreements between measurements and calculations are obtained. The technique has already been implemented as an extension to the existing SOPTIM program.<>