An analytic expression of thermal diffusion coefficient for the hydrodynamic simulation of semiconductor devices

Based on the moments of the Boltzmann transport equation, the authors proposed (1993) a thermal diffusion current density with D/sup T/=(D/T/sub n/)(1-/spl lambda//sub p/) where /spl lambda//sub p/ is a dimensionless parameter extracted from the Monte Carlo (MC) simulation. Here, a simple analytical expression of /spl lambda//sub p/ which is in better agreement with MC data is presented. Based on the MC simulation of n/sup +/-n-n+ structures they have found that the nonlocal mobility behavior is best described by an effective carrier temperature, yielding an expression /spl lambda//sub p/=/spl eta//(1+/spl eta/). They have implemented this new analytical expression in their 2D device simulator. A 0.1/spl mu/m partially-depleted SOI-MOSFET is simulated.