Strain-dependence of electron transport in bulk Si and deep-submicron MOSFETs

Author

Bufler, F.M. ; Yoder, P.D. ; Fichtner, W.

Author_Institution

Inst. fur Integrierte Syst., Eidgenossische Tech. Hochschule, Zurich, Switzerland

fYear

2000

fDate

22-25 May 2000

Firstpage

64

Lastpage

65

Abstract

The authors consider the strain dependence of FET performance in the nonlinear operation regime by full-band Monte Carlo (FBMC) simulation and investigate how this behaviour is related to the corresponding transport properties in strained bulk Si. Enhanced drain currents of up to 20% were found in n-MOSFETs under strain which could be mainly related to higher low-field mobilities, but enhanced bulk velocities at medium fields appear to have a significant influence at the highest drain voltages.

Keywords

MOSFET; Monte Carlo methods; band structure; carrier mobility; digital simulation; elemental semiconductors; semiconductor device models; silicon; FET performance; Si; bulk Si; deep-submicron MOSFETs; drain voltage; electron transport; enhanced bulk velocity; enhanced drain currents; full-band Monte Carlo simulation; low-field mobility; nonlinear operation regime; strain dependence; transport properties; Acoustic scattering; Capacitive sensors; Conductivity; Electrons; FETs; Impurities; MOSFETs; Monte Carlo methods; Phonons; Photonic band gap;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow 2000. 7th International Workshop on

Conference_Location

Glasgow, UK

Print_ISBN

0-85261-704-6

Type

conf

DOI

10.1109/IWCE.2000.869924

Filename

869924