Title :
Nonequilibrium hole transport in deep sub-micron well-tempered Si p-MOSFETs
Author :
Watling, J.R. ; Zhao, Y.P. ; Asenov, A. ; Barker, J.R.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
Using 2D full-band MC simulations the authors study nonequilibrium transport effects and the performance potential of well tempered Si p-channel MOSFETs covering gate lengths ranging from 90nm to 25nm. By comparing MC simulations with carefully calibrated drift diffusion (DD) simulations of the same devices, they provide a quantitative estimate of the importance and the influence of nonequilibrium transport on the device performance.
Keywords :
MOSFET; Monte Carlo methods; digital simulation; hole mobility; semiconductor device models; 2D full-band Monte Carlo simulation; 90 to 25 nm; Si; deep sub-micron well-tempered p-MOSFETs; device performance potential; drift diffusion simulations; gate length; nonequilibrium hole transport effects; MOSFET circuits; Monte Carlo methods; Voltage;
Conference_Titel :
Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow 2000. 7th International Workshop on
Conference_Location :
Glasgow, UK
Print_ISBN :
0-85261-704-6
DOI :
10.1109/IWCE.2000.869925
