Title :
Influence of electron-electron interaction on electron distributions in short Si MOSFETs analysed using the local iterative Monte Carlo technique
Author :
Mietzner, T. ; Jakumeit, J. ; Ravaioli, U.
Author_Institution :
II. Phys. Inst., Koln Univ., Germany
Abstract :
The effects of electron-electron interaction on the electron distribution in n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) are studied using the local iterative Monte Carlo technique (LIMO technique). This work demonstrates that electron-electron scattering can be efficiently treated within this technique.
Keywords :
MOSFET; Monte Carlo methods; digital simulation; elemental semiconductors; iterative methods; semiconductor device models; silicon; LIMO technique; Si; electron distributions; electron-electron interaction; local iterative Monte Carlo technique; n-channel metal-oxide-semiconductor field effect transistors; short MOSFETs; Charge carrier processes; Electrons; FETs; Information technology; Iterative algorithms; Mie scattering; Monte Carlo methods; Particle scattering; Scientific computing; Silicon devices;
Conference_Titel :
Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow 2000. 7th International Workshop on
Conference_Location :
Glasgow, UK
Print_ISBN :
0-85261-704-6
DOI :
10.1109/IWCE.2000.869926
