DocumentCode :
2431838
Title :
Increase in efficiency and material yield by use of PECVD silicon nitride in a simple screen printing process on Solarex material [solar cells]
Author :
Duerinclor, F. ; Einhaus, R. ; Van Kerschaver, E. ; Szlutcik, J. ; Nijs, J. ; Mertens, R. ; Roy, M. ; Narayanan, S.
Author_Institution :
IMEC, Leuven, Belgium
fYear :
1997
fDate :
29 Sep-3 Oct 1997
Firstpage :
259
Lastpage :
262
Abstract :
This work presents a simple screen printing solar cell process based on firing the front contacts through a silicon nitride (SiNx ) layer deposited by direct plasma enhanced chemical vapour deposition (PECVD). This processing sequence of only six steps results in an excellent front surface and bulk passivation. Efficiency improvements up to 1.5% compared to a state-of-the art processing sequence were obtained on Solarex multicrystalline material. Independently confirmed efficiencies of almost 16% were reached. First indications of the excellent passivation quality of SiNx deposited by direct PECVD on p-Si are given
Keywords :
elemental semiconductors; passivation; plasma CVD; plasma CVD coatings; semiconductor device testing; silicon; silicon compounds; solar cells; Si; SiN; SiNx; SiNx layer deposition; Solarex multicrystalline material; bulk passivation; direct plasma enhanced chemical vapour deposition; efficiency improvement; front contacts firing; front surface; passivation quality; processing sequence; screen printing solar cell process; Chemical processes; Chemical vapor deposition; Firing; Passivation; Photovoltaic cells; Plasma chemistry; Plasma displays; Plasma materials processing; Printing; Silicon compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
ISSN :
0160-8371
Print_ISBN :
0-7803-3767-0
Type :
conf
DOI :
10.1109/PVSC.1997.654078
Filename :
654078
Link To Document :
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