DocumentCode
2431905
Title
Cost-effective thin film solar cell processing on multicrystalline silicon
Author
Vermeulen, T. ; Duerinckx, F. ; De Clercq, K. ; Szlufcik, J. ; Poortmans, J. ; Laermans, P. ; Caymax, M. ; Nijs, J. ; Mertens, R.
Author_Institution
IMEC, Leuven, Belgium
fYear
1997
fDate
29 Sep-3 Oct 1997
Firstpage
267
Lastpage
269
Abstract
Thin-film solar cells have been produced in a pilot-line making use of industrial techniques. Typical laboratory process steps such as P 2O5 solid-source diffusion, emitter etch-back, remote plasma hydrogenation, lithography, metal evaporation and lift-off, have been replaced by cost-effective techniques such as screen printing or POCl3 diffusion, PECVD silicon nitride deposition and screen printing metallization and firing-through-nitride, respectively. The low-cost high-throughput techniques have been applied to epitaxial thin-film solar cells with success. Efficiencies of 12% have been obtained on 20 μm thin-film solar cells made in epitaxial layers on highly doped multicrystalline silicon substrates without making use of optical path length enhancement. The hydrogenation induced by the firing-through-nitride process passivates the bulk of the epitaxial cell but not to the same extent as a remote plasma hydrogenation in the laboratory-scaled process
Keywords
elemental semiconductors; metallisation; passivation; plasma CVD; plasma CVD coatings; semiconductor device manufacture; semiconductor thin films; silicon; solar cells; 12 percent; 20 mum; PECVD; Si; bulk passivation; cost-effective device processing; epitaxial thin-film solar cells; firing-through-nitride; high-throughput techniques; hydrogenation; multicrystalline silicon substrates; screen printing metallization; Etching; Laboratories; Optical films; Photovoltaic cells; Plasma applications; Plasma displays; Plasma materials processing; Printing; Silicon; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location
Anaheim, CA
ISSN
0160-8371
Print_ISBN
0-7803-3767-0
Type
conf
DOI
10.1109/PVSC.1997.654080
Filename
654080
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