Thermal design and analysis of uncooled infrared senor in standard CMOS

This paper presents the thermal design and analysis of uncooled infrared sensor fabricated in SMIC standard 0.18μm CMOS technology. The steady-state and transient thermal simulations have been done by finite-element methods (FEM). The effects of membrane parameters on the thermal performance of the infrared sensor are investigated. The simulation results show that the thermal time constant and temperature rise of pixel are increasing with the size of absorbing layer increment, and the increment of width of polysilicon leads to the decrement of thermal time constant and temperature rise. In addition, to counterpoise these two thermal parameters, a group of the optimized thermally isolated membrane parameters is given.