Investigation of the local force approximation in numerical device simulation by full-band Monte Carlo simulation

Author

Jungemann, C. ; Neinhus, B. ; Meinerzhagen, B.

Author_Institution

Inst. fur Theor. Elektrotech. & Mikroelektron., Bremen Univ., Germany

fYear

2000

fDate

22-25 May 2000

Firstpage

96

Lastpage

97

Abstract

The classical drift-diffusion (DD) model is based on transport coefficients parameterized with the local force (i.e. gradient of the quasi-Fermi potential), where the transport parameters are determined under homogeneous bulk conditions. This approximation is based on the assumption that the local distribution function in the device is completely determined by the local force. The validity of this approximation is investigated by comparison of transport parameters calculated with the device distribution function and with the one for a bulk system with the corresponding force. To this end 1D full-band Monte Carlo (FB-MC) device simulations of a SiGe-HBT and corresponding bulk simulations are performed.

Keywords

Fermi level; Ge-Si alloys; Monte Carlo methods; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; 1D full-band Monte Carlo method; SiGe; SiGe HBT; classical drift-diffusion model; local distribution function; local force approximation; numerical simulation; quasi-Fermi potential; transport coefficients; Analytical models; Distribution functions; Electron mobility; Electronic mail; Energy capture; Hydrodynamics; Microscopy; Monte Carlo methods; Numerical simulation; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow 2000. 7th International Workshop on

Conference_Location

Glasgow, UK

Print_ISBN

0-85261-704-6

Type

conf

DOI

10.1109/IWCE.2000.869942

Filename

869942