DocumentCode :
2432093
Title :
Advances in the CIS research at NREL
Author :
Ramanathan, K. ; Bhattacharya, R.N. ; Granata, J. ; Webb, J. ; Niles, D. ; Contreras, M.A. ; Wiesner, H. ; Hasoon, F.S. ; Noufi, R.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
fYear :
1997
fDate :
29 Sep-3 Oct 1997
Firstpage :
319
Lastpage :
322
Abstract :
This paper summarizes the research of the CIS Team at NREL in three major areas: absorber deposition; understanding the role of chemical bath deposited (CBD) CdS in CIS junctions; and in the development of devices without CdS. Low cost, scaleable processes chosen for absorber fabrication include sputtering, electrodeposition (ED), and close spaced sublimation (CSS). The interaction between the CBD and the CIS has been investigated and the results show that Cd might be instrumental in shaping the interface. We have also developed a process to fabricate a 13.5% efficiency ZnO/CulnGaSe2 device without CdS or other buffer layers
Keywords :
copper compounds; electrodeposits; gallium compounds; indium compounds; p-n heterojunctions; semiconductor thin films; solar cells; sputtered coatings; sublimation; ternary semiconductors; 13.5 percent; CIS junctions; NREL CI team; ZnO-CuInSe2; ZnO/CulnGaSe2 device; absorber deposition; absorber fabrication; chemical bath deposition; close spaced sublimation; electrodeposition; low cost scaleable processes; sputtering; thin film solar cells; Atherosclerosis; Atmosphere; Cascading style sheets; Chemicals; Computational Intelligence Society; Fabrication; Laboratories; Sputtering; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
ISSN :
0160-8371
Print_ISBN :
0-7803-3767-0
Type :
conf
DOI :
10.1109/PVSC.1997.654092
Filename :
654092
Link To Document :
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