Title :
The Impact of Base Current or Voltage Biasing On Characterization and Modeling of HBTs
Author :
Dunleavy, L.P. ; Lee, B. ; Clausen, W. ; Markell, D.P.
Author_Institution :
Modelithics Inc., Tampa, FL
Abstract :
The impact of base current or voltage biasing on HBT device characterization and modeling is explored experimentally for an InGaP/GaAs on wafer (1.6times30 um) device. The important influences of the measurements with base voltage source are identified by showing the model performances of the device. The HBTs were modeled with several advance HBT models, and a Curtice modified Gummel is used for the electro-thermal modeling examples shown herein.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device models; Curtice modified Gummel; HBT modeling; InGaP-GaAs; base current; electrothermal modeling; heterojunction bipolar transistor; voltage biasing; wafer device; Bipolar transistors; Current measurement; Heterojunction bipolar transistors; Microwave transistors; Performance evaluation; Power system modeling; Predictive models; Semiconductor device modeling; Thermal resistance; Voltage measurement;
Conference_Titel :
Wireless and Microwave Technology Conference, 2006. WAMICON '06. IEEE Annual
Conference_Location :
Clearwater Beach, FL
Print_ISBN :
1-4244-0848-2
Electronic_ISBN :
1-4244-0849-0
DOI :
10.1109/WAMICON.2006.351967
