The Impact of Base Current or Voltage Biasing On Characterization and Modeling of HBTs

Author

Dunleavy, L.P. ; Lee, B. ; Clausen, W. ; Markell, D.P.

Author_Institution

Modelithics Inc., Tampa, FL

fYear

2006

fDate

4-5 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

The impact of base current or voltage biasing on HBT device characterization and modeling is explored experimentally for an InGaP/GaAs on wafer (1.6times30 um) device. The important influences of the measurements with base voltage source are identified by showing the model performances of the device. The HBTs were modeled with several advance HBT models, and a Curtice modified Gummel is used for the electro-thermal modeling examples shown herein.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device models; Curtice modified Gummel; HBT modeling; InGaP-GaAs; base current; electrothermal modeling; heterojunction bipolar transistor; voltage biasing; wafer device; Bipolar transistors; Current measurement; Heterojunction bipolar transistors; Microwave transistors; Performance evaluation; Power system modeling; Predictive models; Semiconductor device modeling; Thermal resistance; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless and Microwave Technology Conference, 2006. WAMICON '06. IEEE Annual

Conference_Location

Clearwater Beach, FL

Print_ISBN

1-4244-0848-2

Electronic_ISBN

1-4244-0849-0

Type

conf

DOI

10.1109/WAMICON.2006.351967

Filename

4161129