Monte Carlo study of the lateral distribution of gate current density along the channel of submicron LDD MOSFET´s

This paper reports on a detailed simulation study of the spatial and energy distributions of hot electrons and their application in modelling gate current density profiles along the channel of a 0.35 mm LDD MOSFET. The calculation of gate current distributions in submicron MOSFETs is a difficult task, especially as it requires resolution of the distribution function to very low orders of magnitude. One of the most powerful methods for tackling this problem is an ensemble Monte Carlo simulation including a full bandstructure description and a self-consistent electric field solution. For this reason, we have used the IBM DAMOCLES simulator.