Title :
A new analytical model for lateral breakdown voltage of double-gate power MOSFETs
Author :
Mohammad, Hossein ; Abdullah, Huda ; Dee, Chang Fu ; Menon, P. Susthitha ; Majlis, Burhanuddin Yeop
Author_Institution :
Dept. of Electr., Electron. & Syst. Eng., Univ. Kebangsaan Malaysia (UKM), Bangi, Malaysia
Abstract :
A simple analytical model for the surface potential, surface field distribution and lateral breakdown voltage of double-gate power MOSFETs has been proposed. The model is based on the analytical solution for the two-dimensional Poisson equation. From this solution, the reliance of breakdown voltage on the device parameters is also investigated. The validity of this model is demonstrated by comparison with numerical simulation and experimental values.
Keywords :
Poisson equation; numerical analysis; power MOSFET; analytical model; double-gate power MOSFET; lateral breakdown voltage; numerical simulation; surface field distribution; two-dimensional Poisson equation; Analytical models; Electric fields; Electric potential; Logic gates; MOSFETs; Mathematical model; Analytical model; Breakdown voltage; Double-gate; Surface potential;
Conference_Titel :
Micro and Nanoelectronics (RSM), 2011 IEEE Regional Symposium on
Conference_Location :
Kota Kinabalu
Print_ISBN :
978-1-61284-844-0
DOI :
10.1109/RSM.2011.6088299
