DocumentCode
2432270
Title
Dual-diode limiter for high-power/low-spike-leakage applications
Author
Tan, R.J. ; Kaul, R.
Author_Institution
Harryn Diamond Lab., Adelphi, MD, USA
fYear
1990
fDate
8-10 May 1990
Firstpage
757
Abstract
Procedures, confirmed by both measured data and microwave circuit analysis are presented for designing dual-diode, passive microwave limiters with low spike leakage (<100 nJ) and the ability to handle high peak power (on the order of 10 mJ of incident energy). Design parameters covered are PIN diode characteristics, polarity, package parasitics, and the spacing between the diodes. Such limiters are needed to protect sensitive electronics from high-power RF.<>
Keywords
microwave limiters; p-i-n diodes; protection; solid-state microwave circuits; PIN diode characteristics; design parameters; dual diode limiter; high peak power; high power RF protection; low-spike-leakage applications; package parasitics; passive microwave limiters; polarity; sensitive electronics; Capacitance; Diodes; Energy measurement; Frequency measurement; Inductance; Insertion loss; Integrated circuit noise; Integrated circuit packaging; Laboratories; Protection;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location
Dallas, TX
Type
conf
DOI
10.1109/MWSYM.1990.99689
Filename
99689
Link To Document