DocumentCode
2432279
Title
2 D-hydrodynamic energy model including avalanche breakdown phenomenon for power field effect transistors
Author
Rousseau, M. ; De Jaeger, J.C.
Author_Institution
Cite Sci., Inst. d´´Electron. et de Microelectron. du Nord, Villeneuve d´´Ascq, France
fYear
2000
fDate
22-25 May 2000
Firstpage
110
Lastpage
111
Abstract
Breakdown phenomenon constitutes one of the main limitations of Field Effect Transistors (FETs) for power applications. In order to study the avalanche phenomenon, a 2 D hydrodynamic energy model has been carried out. It includes the specific physical limitations inherent in submicron gate length devices and makes it possible the breakdown phenomenon behaviour and the voltage breakdown determination for gate recessed topology devices close to experiment making.
Keywords
avalanche breakdown; power field effect transistors; semiconductor device breakdown; semiconductor device models; 2D hydrodynamic energy model; avalanche breakdown; power field effect transistor; Avalanche breakdown; Breakdown voltage; Charge carrier processes; Difference equations; Electric breakdown; Electrons; FETs; Hydrodynamics; Numerical models; Poisson equations;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow 2000. 7th International Workshop on
Conference_Location
Glasgow, UK
Print_ISBN
0-85261-704-6
Type
conf
DOI
10.1109/IWCE.2000.869949
Filename
869949
Link To Document