• DocumentCode
    24323
  • Title

    0.4 mw wideband lna with double gm enhancement and feed-forward noise cancellation

  • Author

    Zhi Li ; Liguo Sun ; Lu Huang

  • Author_Institution
    Dept. of Electron. Eng. & Inf. Sci., Univ. of Sci. & Technol. of China, Hefei, China
  • Volume
    50
  • Issue
    5
  • fYear
    2014
  • fDate
    Feb. 27 2014
  • Firstpage
    400
  • Lastpage
    401
  • Abstract
    A low-power wideband common-gate (CG) low-noise amplifier (LNA) presented . The CG LNA uses double gm enhancement to provide input matching under low-power consumption. Feed-forward noise cancellation (FFNC) is employed in the LNA to suppress the noise from the CG transistor. The LNA is designed and fabricated in TSMC 130-nm CMOS technology. This LNA can achieve a maximum gain of 14 dB with a 3 dB bandwidth from 350 to 950 MHz. The LNA consumes 0.5 mA current under a 0.8-V supply. The average noise figure of the LNA is 4.0 dB. The core area of the LNA is 0.06 mm2.
  • Keywords
    CMOS analogue integrated circuits; UHF amplifiers; feedforward; low noise amplifiers; TSMC CMOS technology; current 0.5 mA; double gm enhancement; feed-forward noise cancellation; frequency 350 MHz to 950 MHz; gain 14 dB; input matching; low-power consumption; noise figure; power 0.4 mW; size 130 nm; voltage 0.8 V; wideband LNA;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2013.3537
  • Filename
    6759714