Investigation on effect of tilt angle ion implantations for vertical double gate MOSFET

Author

Bakar, A. R. Abu ; Saad, Ismail

Author_Institution

Sch. of Eng. & I.T, Univ. Malaysia Sabah (UMS), Kota-Kinabalu, Malaysia

fYear

2011

fDate

28-30 Sept. 2011

Firstpage

100

Lastpage

103

Abstract

The significance of variation on tilt angle ion implantation for fabricating the Vertical MOSFET with ORI (Oblique Rotating Implantation) technique is investigated. For this purpose, the angle of the ion implantation for forming the source and drain region is varied from 0° to 80°. Various effects on physical structure of the device and its corresponding electrical properties have been observed. The overall result promotes the optimal angle for the ion implantation of the Vertical Double Gate MOSFET (VDGM) structure is found to be remarkable at 45° with shorter channel length, L_g= 45nm, lower sheet resistance R_D= 14.7Ω, R_S=28.9 Ω, high sub-threshold swing, SS= 62mV/dec and high saturation current, I_DSAT= 1.04mA/μm.

Keywords

MOSFET; ion implantation; ORI technique; VDGM structure; high carrier concentration; high saturation current; high subthreshold swing; low sheet resistance; off state leakage current; resistance 14.7 ohm; resistance 28.9 ohm; shorter channel length; size 45 nm; source-drain region; tilt angle ion implantations; vertical double gate MOSFET; Ion implantation; Junctions; Logic gates; MOSFET circuits; Performance evaluation; Silicon; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro and Nanoelectronics (RSM), 2011 IEEE Regional Symposium on

Conference_Location

Kota Kinabalu

Print_ISBN

978-1-61284-844-0

Type

conf

DOI

10.1109/RSM.2011.6088301

Filename

6088301