Title :
On the role of Na and modifications to Cu(In,Ga)Se2 absorber materials using thin-MF (M=Na, K, Cs) precursor layers [solar cells]
Author :
Contreras, Miguel A. ; Egaas, B. ; Dippo, P. ; Webb, J. ; Granata, J. ; Ramanathan, K. ; Asher, S. ; Swartzlander, A. ; Noufi, R.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
fDate :
29 Sep-3 Oct 1997
Abstract :
The growth and characterization of Cu(In,Ga)Se2 polycrystalline thin film solar cells under the presence of thin-MF (M=Na, K, Cs) precursor layers is presented. Some electrical, structural and electronic absorber properties due to the presence of such Group Ia impurities are quantified along with their influence in device performance. The authors present a growth model for the role of Na in Cu(In,Ga)Se2 that attributes the enhancements in electrical conductivity and photovoltaic device performance to the extinction of a finite number of donor states (i.e., InCu) at the bulk and grain-boundary regions
Keywords :
copper compounds; gallium compounds; indium compounds; semiconductor device testing; semiconductor growth; semiconductor thin films; sodium; solar cells; Cu(In,Ga)Se2 solar cells; Cu(InGa)Se2; absorber materials; characterization; electrical conductivity; electrical properties; electronic properties; growth; photovoltaic device performance; polycrystalline thin film solar cells; structural properties; thin-MF precursor layers; Chemical elements; Conducting materials; Conductivity; Crystalline materials; Crystallization; Cyclic redundancy check; Glass; Grain size; Impurities; Lattices;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654102
