Field effect in silicon nanostructure fabricated by Atomic Force Microscopy nano lithography

Author

Dehzangi, Arash ; Larki, Farhad ; Saion, E.B. ; Hutagalung, Sabar D. ; Hamidon, M.N. ; Hassan, Jumiah

Author_Institution

Dept. of Phys., Univ. Putra Malaysia, Serdang, Malaysia

fYear

2011

fDate

28-30 Sept. 2011

Firstpage

104

Lastpage

107

Abstract

The electrical property of silicon nano-structure is highly considered in nanoelectronics. In this context we investigate the field effect in nanostructure Junctionless p-type silicon nanowire transistor under the lateral gate voltage. The device fabricated by means of Atomic Force microscopy (AFM) nano lithography on Silicon on Insulator (SOI) wafer. I-V characteristic and the Drain/Source current under the lateral gate voltage investigated. The subthreshold swing measured and hysteresis effect observed for the old sample compared to new one.

Keywords

atomic force microscopy; elemental semiconductors; nanoelectronics; nanofabrication; nanolithography; nanowires; silicon; silicon-on-insulator; transistors; AFM nanolithography; I-V characteristic; SOI wafer; atomic force microscopy nanolithography; drain-source current; field effect; hysteresis effect; lateral gate voltage; nanoelectronics; nanostructure junctionless p-type silicon nanowire transistor; silicon-on-insulator wafer; subthreshold swing; Atomic force microscopy; Force; Lithography; Logic gates; Silicon; Transistors; Atomic Force Microscopy nano lithography; Field effect; Local Anodic Oxidation; P-type Silicon Nanowire transistor; Silicon on insulator SOI;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro and Nanoelectronics (RSM), 2011 IEEE Regional Symposium on

Conference_Location

Kota Kinabalu

Print_ISBN

978-1-61284-844-0

Type

conf

DOI

10.1109/RSM.2011.6088302

Filename

6088302