• DocumentCode
    2432408
  • Title

    Built-in self-repair techniques for content addressable memories

  • Author

    Lin, Guan-Quan ; Wang, Zhen-Yu ; Lu, Shyue-Kung

  • Author_Institution
    Dep. of Electron. Eng., Fu Jen Catholic Univ., Taipei, Taiwan
  • fYear
    2009
  • fDate
    28-30 April 2009
  • Firstpage
    267
  • Lastpage
    270
  • Abstract
    In this paper, we propose block-level replacement techniques for content-addressable memories. The CAM array is first divided into row banks and column banks. Then, for each divided array (the overlapped CAM cells of a row bank and a column bank), two redundant row blocks are added and reconfiguration is performed at the block level instead of the conventional word level. According to simulation results, the hardware overhead is 1.31% for a 1024 times 1024-bit CAM array. We also analyze the repair rates of our approaches. It is also found that our approach will achieve higher repair rates.
  • Keywords
    content-addressable storage; block-level replacement technique; built-in self-repair technique; content addressable memory; Associative memory; Built-in self-test; CADCAM; Circuit faults; Computer aided manufacturing; Decoding; Fault tolerance; Hardware; Redundancy; Registers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Design, Automation and Test, 2009. VLSI-DAT '09. International Symposium on
  • Conference_Location
    Hsinchu
  • Print_ISBN
    978-1-4244-2781-9
  • Electronic_ISBN
    978-1-4244-2782-6
  • Type

    conf

  • DOI
    10.1109/VDAT.2009.5158146
  • Filename
    5158146