DocumentCode
2432408
Title
Built-in self-repair techniques for content addressable memories
Author
Lin, Guan-Quan ; Wang, Zhen-Yu ; Lu, Shyue-Kung
Author_Institution
Dep. of Electron. Eng., Fu Jen Catholic Univ., Taipei, Taiwan
fYear
2009
fDate
28-30 April 2009
Firstpage
267
Lastpage
270
Abstract
In this paper, we propose block-level replacement techniques for content-addressable memories. The CAM array is first divided into row banks and column banks. Then, for each divided array (the overlapped CAM cells of a row bank and a column bank), two redundant row blocks are added and reconfiguration is performed at the block level instead of the conventional word level. According to simulation results, the hardware overhead is 1.31% for a 1024 times 1024-bit CAM array. We also analyze the repair rates of our approaches. It is also found that our approach will achieve higher repair rates.
Keywords
content-addressable storage; block-level replacement technique; built-in self-repair technique; content addressable memory; Associative memory; Built-in self-test; CADCAM; Circuit faults; Computer aided manufacturing; Decoding; Fault tolerance; Hardware; Redundancy; Registers;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design, Automation and Test, 2009. VLSI-DAT '09. International Symposium on
Conference_Location
Hsinchu
Print_ISBN
978-1-4244-2781-9
Electronic_ISBN
978-1-4244-2782-6
Type
conf
DOI
10.1109/VDAT.2009.5158146
Filename
5158146
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