Two dimensional MESFET simulation of transients and steady state with kinetic based hydrodynamical models

One of the earlier and more widely known hydrodynamical models for simulation of semiconductor devices was put forward by Blotekjaer and subsequently investigated by Baccarani and Wordeman and by other authors (BBW model). In this paper we compare this model for a MESFET with a new hydrodynamical model recently proposed by Anile, Liotta and Mascali (ALM model). The variables are the same as those of BBW but the closure of the equations is obtained in a completely different way. It is based on an asymptotic solution for high fields of the Boltzmann transport equation for semiconductors and therefore it is not necessary to assume phenomenological closures or ad hoc expressions for the productions terms.