DocumentCode
2432466
Title
Quantitative incorporation of sodium in CuInSe2 and Cu(In,Ga)Se2 photovoltaic devices
Author
Granata, J.E. ; Sites, J.R. ; Asher, S. ; Matson, R.J.
Author_Institution
Dept. of Phys., Colorado State Univ., Fort Collins, CO, USA
fYear
1997
fDate
29 Sep-3 Oct 1997
Firstpage
387
Lastpage
390
Abstract
Sodium was deliberately introduced into CuInSe2 and Cu(In,Ga)Se2 photovoltaic solar cells in a controlled manner. The amount of sodium added was varied in order to pinpoint the range of sodium concentrations in the CuIn(Ga)Se2 film for optimal performance. Films were analyzed using secondary ion mass spectroscopy and induced-coupling plasma spectroscopy to quantify the sodium concentration. The results are compared with the calculation. Finished devices show improvements in open-circuit voltage, fill factor and hole density for sodium concentrations in the range of approximately 0.05 to 0.5 atomic percent
Keywords
copper compounds; gallium compounds; hole density; indium compounds; secondary ion mass spectroscopy; sodium; solar cells; ternary semiconductors; Cu(In,Ga)Se2 solar cells; Cu(InGa)Se2-Na; CuInSe2 solar cells; CuInSe2-Na; Na incorporation; fill factor; hole density; induced-coupling plasma spectroscopy; open-circuit voltage; optimal performance; secondary ion mass spectroscopy; sodium concentrations; Computational Intelligence Society; Glass; Laboratories; Mass spectroscopy; Photovoltaic cells; Photovoltaic systems; Plasma devices; Renewable energy resources; Scanning electron microscopy; Solar power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location
Anaheim, CA
ISSN
0160-8371
Print_ISBN
0-7803-3767-0
Type
conf
DOI
10.1109/PVSC.1997.654109
Filename
654109
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